Numerical analysis and device modelling of a lead-free Sr <sub>3</sub> PI <sub>3</sub> /Sr <sub>3</sub> SbI <sub>3</sub> double absorber solar cell for enhanced efficiency
Avijit Ghosh, Mohammad Fokhrul Islam Buian, Md. Maniruzzaman, Md. Mahfuz Hossain, Абул Калам Азад, Asif Ahammad Miazee, Islam Ragab, Abeer A. Hassan, H.A. Alrafai, Siham Khalaf Alla Abdelrahim
Abstract
. The simulation explores the influence of absorber layer thickness, doping level, and defect density on electrical properties like efficiency, short-circuit current, open-circuit voltage, and fill factor. It also examines variations in temperature and assesses series and shunt resistances in addition to electrical factors. The simulation's output offers valuable insights and suggestions for designing and developing double-absorber solar cells.
Topics & Concepts
HalidePhotovoltaic systemSolar cellMaterials scienceOptoelectronicsLead (geology)Energy conversion efficiencySolar cell efficiencyOpticsPhysicsChemistryInorganic chemistryElectrical engineeringEngineeringGeologyGeomorphologyPerovskite Materials and ApplicationsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films