Nesting-like band gap in bismuth sulfide Bi<sub>2</sub>S<sub>3</sub>
W. M. Linhart, Szymon J. Zelewski, P. Scharoch, Filip Dybała, R. Kudrawiec
Abstract
Bi 2 S 3 is a nesting-like band gap semiconductor, where direct optical transition dominates above the indirect one, resulting in a strong absorption edge and excitonic emission.
Topics & Concepts
Nesting (process)BismuthMaterials scienceBand gapSemiconductorAbsorption (acoustics)Enhanced Data Rates for GSM EvolutionDirect and indirect band gapsAbsorption edgeCondensed matter physicsOptoelectronicsPhysicsMetallurgyTelecommunicationsComposite materialComputer scienceChalcogenide Semiconductor Thin Films2D Materials and ApplicationsIron-based superconductors research