Retention Improvement in Vertical NAND Flash Memory Using Electron Back-Tunneling
Sungho Park, Ho-Nam Yoo, Jong-Won Back, Joonhyung Cho, Yeongheon Yang, Jiseong Im, Ryun‐Han Koo, Jonghyun Ko, Jong‐Ho Lee
Abstract
We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between adjacent cells is facilitated by the synergistic effect of the fringing electric field between adjacent word-lines. By applying a single EBT pulse before the program operation in V-NAND flash memory, electrons can be stored in all spacer regions between the cells simultaneously. The electrons stored in the spacer prevent lateral movement of cell electrons, thereby improving the retention characteristics by up to 61%.
Topics & Concepts
Quantum tunnellingFlash (photography)Flash memoryNon-volatile memoryNAND gateOptoelectronicsComputer scienceElectronRandom access memoryData retentionMaterials scienceElectrical engineeringLogic gateEmbedded systemComputer hardwarePhysicsEngineeringOpticsQuantum mechanicsAdvanced Data Storage TechnologiesSemiconductor materials and devicesMagnetic properties of thin films