Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
Samuel James Bader, Hyunjea Lee, Reet Chaudhuri, Shi-Min Huang, Austin Hickman, Alyosha Molnar, Huili Grace Xing, Debdeep Jena, Han Wui Then, Nadim Chowdhury, Tomás Palacios
Abstract
Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal-oxide-semiconductor-based design (CMOS) circuitry necessary for complex control logic. For that reason, implementation of CMOS logic directly in the wide bandgap platform has become a way for each maturing material to compete. This review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials.