Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
Hsiao-Ting Tseng, Tsung-Hsien Hsu, Meng‐Hung Tsai, Chi-Yuen Huang, Chi-Yuen Huang, Cheng-Liang Huang, Cheng-Liang Huang
Topics & Concepts
Materials scienceAnnealing (glass)Resistive random-access memoryOhmic contactThin filmOptoelectronicsAmorphous solidElectrodeWork functionThermal conductionComposite materialLayer (electronics)NanotechnologyCrystallographyPhysical chemistryChemistryAdvanced Memory and Neural ComputingFerroelectric and Piezoelectric MaterialsElectronic and Structural Properties of Oxides