Bandgap Engineering in 2D Lateral Heterostructures of Transition Metal Dichalcogenides via Controlled Alloying
Florence A. Nugera, Prasana K. Sahoo, Yan Xin, Sharad Ambardar, Dmitri V. Voronine, Un Jeong Kim, Yoojoong Han, Hyungbin Son, Humberto R. Gutiérrez
Abstract
Abstract 2D heterostructures made of transition metal dichalcogenides (TMD) have emerged as potential building blocks for new‐generation 2D electronics due to their interesting physical properties at the interfaces. The bandgap, work function, and optical constants are composition dependent, and the spectrum of applications can be expanded by producing alloy‐based heterostructures. Herein, the successful synthesis of monolayer and bilayer lateral heterostructures, based on ternary alloys of MoS 2(1− x ) Se 2 x –WS 2(1− x ) Se 2 x , is reported by modifying the ratio of the source precursors; the bandgaps of both materials in the heterostructure are continuously tuned in the entire range of chalcogen compositions. Raman and photoluminescence (PL) spatial maps show good intradomain composition homogeneity. Kelvin probe measurements in different heterostructures reveal composition‐dependent band alignments, which can further be affected by unintentional electronic doping during the growth. The fabrication of sequential multijunction lateral heterostructures with three layers of thickness, composed of quaternary and ternary alloys, is also reported. These results greatly expand the available tools kit for optoelectronic applications in the 2D realm.