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The role of Ge vacancies and Sb doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in SbxGe1-1.5xTe and SbxGe1-xTe Compounds

Shuo Chen, Hao Bai, Huijuan Wu, Jiaxin Wu, Z. Chen, Xianli Su, C. Uher, Xinfeng Tang

2022Materials Today Physics23 citationsDOI

Topics & Concepts

Materials scienceDopantThermoelectric effectDopingSolid solutionGrain boundaryVacancy defectThermoelectric materialsCrystallographyCondensed matter physicsChemical physicsThermal conductivityThermodynamicsMetallurgyMicrostructureOptoelectronicsChemistryComposite materialPhysicsAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenides
The role of Ge vacancies and Sb doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in SbxGe1-1.5xTe and SbxGe1-xTe Compounds | Litcius