Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals
Yaru Gong, Wei Dou, Bochen Lu, Xuemei Zhang, Zhu He, Pan Ying, Qingtang Zhang, Yuqi Liu, Yanan Li, Xinqi Huang, Muhammad Faisal Iqbal, Shihua Zhang, Di Li, Yongsheng Zhang, Haijun Wu, Guodong Tang
Abstract
Abstract N -type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n -type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl 6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n -type SnSe 0.92 + 0.03WCl 6 .