High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films
Mengting Qiu, Zhenglin Jia, Mingyang Yang, Kazhihito Nishimura, Cheng‐Te Lin, Nan Jiang, Qilong Yuan
Abstract
Abstract As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio ( R 205nm / R 280nm = 235) and high detectivity up to 1.28 × 10 11 Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.