Design of a Controllable Redox‐Diffusive Threshold Switching Memristor
Yiming Sun, Cheng Song, Siqi Yin, Leilei Qiao, Qin Wan, Rui Wang, Fei Zeng, Feng Pan
Abstract
Abstract With the rapid development of information technique in the big‐data era, there is an extremely urgent demand for new circuit building blocks, represented by resistive switching memristors with high speed, high‐density integration, and power‐efficiency, to overcome the limitations of electronic device scaling and thus achieve non‐von‐Neumann neuromorphic computing. Redox‐diffusive threshold switching memristors, based on the volatile formation/rupture of metallic conductive filaments, are attracting great attention for many novel applications, ranging from selectors to synaptic and neuronal devices. Here, how to design a proper redox‐diffusive threshold switching memristor is comprehensively introduced, with particular focus on the effect of the device structure and material composition on the device performance. Addressing the simple metal–insulator–metal structure, the switching properties and the underlying mechanisms are discussed along with the order of electrodes and dielectrics. Finally, how the properties determine device applications and how applications require properties is investigated. This work offers potential rules for designing redox‐diffusive threshold switching memristors with regards to structure and composition and promotes the practical implementation of memristor‐based information processing.