Process integration and future outlook of 2D transistors
Kevin O’Brien, Carl H. Naylor, C. J. Dorow, K. Maxey, Ashish Verma Penumatcha, Andrey Vyatskikh, Ting Zhong, A. Kitamura, Sudarat Lee, Carly Rogan, Wouter Mortelmans, Mahmut S. Kavrik, Rachel C. Steinhardt, Pratyush Buragohain, Sourav Dutta, Tristan A. Tronic, Scott B. Clendenning, P. Fischer, E. Steve Putna, M. Radosavljević, Matt Metz, Uygar E. Avci
Abstract
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary metal-oxide-semiconductor (CMOS) devices based on stacked 2D TMD nanoribbons and specifically highlight issues that still need to be resolved by the 2D community in five crucial research areas: contacts, channel growth, gate oxide, variability, and doping. While 2D TMD transistors have great potential, more research is needed to understand the physical interactions of 2D materials at the atomic scale. 2D semiconductors have been proposed as a potential option to replace or complement silicon electronics at the nanoscale. Here, the authors discuss the recent progress and remaining challenges that need to be addressed by the academic and industrial research communities towards the commercialization of 2D transistors.