Electron transfer tuned by pressure-dependent aggregation-induced emission in InP/ZnS quantum dot–anthraquinone complexes
Xiaxia Qin, Haiwa Zhang, Lin Chen, Ya Chu, Guozhao Zhang, Qinglin Wang, Lingrui Wang, Qian Li, Yinwei Li, Haizhong Guo, Cailong Liu
Abstract
Electron transfer (ET) process is considered a substantial factor in influencing the photoelectric conversion efficiency of optoelectronic devices. While pressure has demonstrated effective tune ET, a comprehensive investigation into the mechanisms for both restraining and promoting ET remains elusive. Herein, we have performed measurements using in situ high-pressure steady-state photoluminescence (PL), Raman scattering spectra, and femtosecond transient absorption (fs-TA) spectroscopy on InP/ZnS quantum dot–anthraquinone (InP/ZnS QD-AQ) complexes. The experimental results have demonstrated that the pressure-suppressed ET process in the InP/ZnS QD-AQ complexes arises from both the aggregation-induced emission (AIE) effect of AQ in toluene and the quantum confinement effect of the InP/ZnS QDs. The reduction in the distance between InP/ZnS QD and AQ under pressure emerges as a key factor that promotes the ET process in the InP/ZnS QD-AQ complexes. Furthermore, we observed that the pressure not only enhances the ET process but also suppresses the auger recombination process in liquid phase I of toluene, consequently leading to an enhancement in the photoelectric conversion efficiency. This study contributes to understanding the mechanism of the ultrafast dynamic processes in the pressure-induced QD-receptor complexes, and it has great potential for preparing efficient and stable optoelectronic devices.