Design and simulation of a high performance Ag3CuS2 jalpaite-based photodetector
Sheikh Noman Shiddique, Md. Islahur Rahman Ebon, Md. Alamin Hossain Pappu, Md. Choyon Islam, Jaker Hossain
Abstract
This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband Ag 3 CuS 2 photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS 2 and BaSi 2 semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers. Also, the intricate interactions between WS 2 /Ag 3 CuS 2 and Ag 3 CuS 2 /BaSi 2 interface properties of the photodetector are explored. The Ag 3 CuS 2 -based PD remarkably produces the best outcomes with an open-circuit voltage of 0.74 V, current of 43.79 mA/cm 2 , responsivity of 0.79 AW -1 and detectivity of 4.73 × 10 14 Jones and over 90 % QE in the NIR range for the Ag 3 CuS 2 PD. The results showcase this jalpaite material as a promising one in the field of PD.