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An Efficient, Broadband SiGe HBT Non-Uniform Distributed Power Amplifier Leveraging a Compact, Two-Section <i>λ</i>/4 Output Impedance Transformer

Inchan Ju, Seokchul Lee, John D. Cressler

2022IEEE Transactions on Microwave Theory and Techniques20 citationsDOI

Abstract

An efficient, broadband SiGe HBT cascode nonuniform distributed power amplifier (NDPA) is presented for low-cost, fully integrated Si-based phased arrays. Optimum load impedances at each SiGe HBT cascode in a four-stage NDPA core are obtained by scaling the characteristic impedance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Z_{0}$ </tex-math></inline-formula> ) of the collector transmission lines (TLs) and tapering the SiGe HBT emitter area simultaneously. A novel compact, lumped-element two-section <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> /4 output impedance transformer (OIT) is proposed to lower the NDPA load impedance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Z_{L}$ </tex-math></inline-formula> ) from 50 to 25 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> over more than one decade bandwidth (BW). Each <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> /4 impedance transformer is realized by four cascaded <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CLC</i> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula> -networks integrated into a single three-turn symmetric inductor in order to achieve compact size, high passive efficiency, and high <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> cutoff frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{c}$ </tex-math></inline-formula> ). The systematic design approach of a lumped-element <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> /4 impedance transformer with an arbitrary <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Z_{0}$ </tex-math></inline-formula> is described in detail. The prototype NDPA was fabricated in 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe HBT BiCMOS technology. The proposed SiGe HBT cascode NDPA supports both high linearity (HL) and high gain (HG) modes, each suited to a specific application. The NDPA attains a peak power gain of 10.3/12.5 dB, a saturated output power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm {out}}$ </tex-math></inline-formula> ) of 21.3/21.5 dBm, and a power added efficiency (PAE) of 12.2%/12.5%–21.6%/22.0% for HL/HG modes, with a 3-dB BW from 1.5 to 24.0 GHz. The NDPA delivers 13.0-dBm average <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm {out}}$ </tex-math></inline-formula> with a PAE of 10.0% at 6-Gbit/s data rate 64 QAM modulation.

Topics & Concepts

AmplifierHeterojunction bipolar transistorElectrical engineeringMathematicsEngineeringTransistorCMOSBipolar junction transistorVoltageRadio Frequency Integrated Circuit DesignMicrowave Engineering and WaveguidesAdvanced Power Amplifier Design