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Understanding fatigue and recovery mechanisms in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors for designing high endurance ferroelectric memory and neuromorphic hardware

Xinye Li, Padma Srivari, Ella Paasio, Sayani Majumdar

2025Nanoscale17 citationsDOIOpen Access PDF

Abstract

cycles at room temperature, leading to ultralow power ferroelectric non-volatile memory components or synaptic weight elements compatible with online training tasks for neuromorphic computing.

Topics & Concepts

Neuromorphic engineeringCapacitorMechanism (biology)Materials scienceFerroelectricityNon-volatile memoryOptoelectronicsComputer scienceComputer architectureEngineering physicsElectrical engineeringEngineeringPhysicsVoltageArtificial intelligenceQuantum mechanicsDielectricArtificial neural networkFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing
Understanding fatigue and recovery mechanisms in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors for designing high endurance ferroelectric memory and neuromorphic hardware | Litcius