2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
Melanie Timpel, Giovanni Ligorio, Amir Ghiami, Luca Gavioli, Emanuele Cavaliere, Andrea Chiappini, Francesca Rossi, Luca Pasquali, Fabian Gärisch, Emil List, P. Nozar, A. Quaranta, Roberto Verucchi, Marco Vittorio Nardi
Abstract
Abstract The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS 2 ). A major obstacle for the industrial production of MoS 2 -based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS 2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large-area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS 2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS 2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS 2 , was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS 2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS 2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.