Self-Competitive Growth of CsPbBr<sub>3</sub> Planar Nanowire Array
Chao Fan, Meiyi Zhu, Xing Xu, Peng Wang, Qinglin Zhang, Xingliang Dai, Ke Yang, Haiping He, Zhizhen Ye
Abstract
Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed “self-competitive growth” for heteroepitaxy of CsPbBr 3 PNAs on mica. The key to inducing the self-competitive growth of CsPbBr 3 PNAs on mica involves restricting the nucleation of CsPbBr 3 nanowires in a high-adsorption region, which is accomplished by overlaying graphite sheets on the mica surface. Theoretical calculations and experimental results demonstrate that CsPbBr 3 nanowires oriented perpendicular to the boundary of the high-adsorption area exhibit greater competitiveness in intercepting the growth of nanowires in the other two directions, resulting in PNAs with a consistent orientation. Moreover, these PNAs exhibit low-threshold and stable amplified spontaneous emission under one-, two-, and three-photon excitation, indicating their potential for an integrated laser array.