Antiferroelectric Phase Evolution in Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> Thin Film Toward High Endurance of Non-Volatile Memory Devices
Danyang Chen, Shuman Zhong, Yulong Dong, Tianning Cui, Jingquan Liu, Mengwei Si, Xiuyan Li
Abstract
In this study, we experimentally and theoretically demonstrated a universal pathway of hysteresis evolution in polarization switching cycling in both antiferroelectric (AFE) and ferroelectric (FE) Hf xZr <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text {1-x}}\text{O}\,\,_{{2}}$ </tex-math></inline-formula> (HZO) thin films. AFE films can achieve sufficient remnant polarization and high endurance by engineering the evolution process of double hysteresis merge. Based on this, we propose a new strategy for realizing high-endurance AFE films in non-volatile memory devices. Additionally, a record high endurance >10 12 on 6 nm AFE HZO under full polarization switching conditions at 4.5 MV/cm and 1 MHz is achieved to demonstrate the potential of this strategy.