Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Dolar Khachariya, Shane Stein, Will Mecouch, M. Hayden Breckenridge, Shashwat Rathkanthiwar, Seiji Mita, Baxter Moody, Pramod Reddy, James Tweedie, Ronny Kirste, Kacper Sierakowski, G. Kamler, Michał Boćkowski, E. Kohn, Spyridon Pavlidis, Ramón Collazo, Zlatko Sitar
Abstract
Abstract We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm −1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.