Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
N. T. Bagraev, С. А. Кукушкін, А. В. Осипов, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov
Abstract
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO) gas. As a result of investigations in SiC structures grown on Si(110) and Si(111), the appearance of two quantum effects is found in weak magnetic fields at room temperature. These effects are, first, the formation of hysteresis of the static magnetic susceptibility and, second, the generation of Aharonov–Bohm oscillations in the field dependences of the static magnetic susceptibility. The first effect is associated with the Meissner–Ochsenfeld effect and the second effect, with the presence of microdefects in the form of nanotubes and micropores formed during the synthesis of structures in them under the SiC layer. In the SiC structures grown on Si(100), these effects are not detected, which is related to a different mechanism of SiC formation on the Si(100) surface.