Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup>
Yuanjie Lv, Hongyu Liu, Xingye Zhou, Yuangang Wang, Xubo Song, Yuncong Cai, Qinglong Yan, Chenlu Wang, Shixiong Liang, Jincheng Zhang, Zhihong Feng, Hong Zhou, Shujun Cai, Yue Hao
Abstract
In this work, we have demonstrated highperformance lateral β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs with gate-to-drain distance (LGD) of 4.8 μm/17.8 μm demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance (RON,sp) of 7.08 mΩ·cm2 /46.2 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , respectively, yielding a high P-FOM of 277 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and averaged electrical field of 2.9 MV/cm for the device with LGD = 4.8 μm. To the best of all the authors' knowledge, this P-FOM of 277 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and BV = 2.9 kV are the highest values among all the lateral D-mode β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 109, these β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs show a great potential for future power electronic applications.