New Strategies for Engineering Tensile Strained Si Layers for Novel n-Type MOSFET
Thomas David, Isabelle Berbézier, Jean‐Noël Aqua, Marco Abbarchi, A. Ronda, N. Pons, Francis Domart, Pascal Costaganna, Gregory U’Ren, Luc Favre
Abstract
and keep Si strained. Various epitaxial processes could be revisited in light of these new results. The generic and simple process implemented here meets all the requirements of the microelectronics industry and should be rapidly integrated in the fabrication lines of large multifinger 2.5 V n-type MOSFET on SOI used for RF-switch applications and for many other applications.
Topics & Concepts
Materials scienceEpitaxyAnnealing (glass)MicroelectronicsStrain engineeringSilicon on insulatorMOSFETOptoelectronicsGermaniumSiliconComposite materialLayer (electronics)TransistorElectrical engineeringEngineeringVoltageAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and ApplicationsAdvanced Surface Polishing Techniques