3D NAND Scaling in the next decade
Russ Meyer, Y. Fukuzumi, Yingda Dong
Abstract
As 3D NAND enters its second decade of scaling, we must continue to develop solutions to maintain cost and performance improvement trajectories. Looking forward, scaling vectors that reduce stack height demands are crucial for the economic viability of the roadmap. Scaling vectors of 3D NAND towards next several nodes are discussed. Block architecture, WL pitch scaling, cell film composition, and WL drive schemes will be key enablers for structural stability and device performance, without sacrificing die area.
Topics & Concepts
NAND gateScalingStack (abstract data type)Block (permutation group theory)Computer scienceKey (lock)Logic gateMathematicsAlgorithmOperating systemGeometryThin-Film Transistor TechnologiesAdvanced Data Storage TechnologiesSemiconductor materials and devices