Advanced TCAD Simulation and Calibration of Gallium Oxide Vertical Transistor
Hiu Yung Wong, Armand C. Fossito Tenkeu
Abstract
In this paper, advanced β -Ga 2 O 3 TCAD simulation parameters and methodologies are presented by calibrating simulation setup to vertical junctionless multi-gate transistor experimental data. Through careful calibration, several important β -Ga 2 O 3 device physics are identified. The effects of compensation doping and incomplete ionization of dopants are investigated. Electron Philips unified carrier mobility (PhuMob) model, which can capture the temperature effect, is used. We also show that interfacial traps possibly play no role on the non-ideal sub-threshold slope (SS) and short channel effect is the major cause of SS degradation. The breakdown mechanism of the junctionless Ga 2 O 3 transistor is also discussed and is shown to be limited by channel punch-through in off-state. The calibrated models match experimental Capacitance-Voltage (CV) and Current-Voltage (IV) well and can be used to predict the electrical performance of novel β -Ga 2 O 3 devices.