A Literature Survey on Tunnel Field Effect Transistors
Soumya Sen, Ashish Raman, Mamta Khosla
Abstract
TFET or Tunnel Field Effect Transistor in recent times has been the center of attraction of vast number of researcher’s despite of having minute subthreshold slope and excessive Ion/Ioff ratio. It is known that TFETs are much more immune to short-channel effects and fluctuations of random dopants in comparison to their MOSFET counterparts. TFETs are actually gated p-i-n diodes having tunneling current flowing between source and channel bands. In this paper deep rooted literature review has been done scanning each and every aspects of TFET including the variations of performance with different parameters. The paper finally gives a picture on the recent progress of TFET in different aspects such as from subthreshold swing to a significantly lower leakage current and high on current .For the simulation curves Nanohub.org was used as a tool. Lastly different types of TFET in respect of doping to symmetry and also gates are compared.