Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors
Minjae Kim, Yongsu Lee, Kyuheon Kim, G. Pham, Kiyung Kim, Jae Hyeon Jun, Hae‐Won Lee, S. Y. Yoon, Hyeon Jun Hwang, Myung Mo Sung, Byoung Hun Lee
Abstract
could be achieved at 77 K. These enhancements strongly indicate that the previously reported high off-state current was originated from interfacial defects formed at the metal-Te contact interface. Although further studies concerning this interface are still necessary, the findings herein demonstrate that the major obstacles hindering the use of Te for ultrathin p-channel device applications can be eliminated by proper process optimization.
Topics & Concepts
HysteresisField-effect transistorChannel (broadcasting)OptoelectronicsTransistorMaterials scienceElectrical engineeringEngineering physicsPhysicsEngineeringCondensed matter physicsVoltagePhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsSemiconductor Quantum Structures and Devices