Suppressing Thermal Tail by Dirac States and High Density of States in Two-Dimensional Ag<sub>2</sub>S toward Low-Power Electronics
Chuyao Chen, Wenhan Zhou, Jialin Yang, Hengze Qu, Zhenhua Wu, Haibo Zeng, Shengli Zhang
Abstract
To further reduce power dissipation, suppressing the subthreshold swing ( SS ) to overcome the physical limit of 60 mV dec –1 is demanded in metal-oxide-semiconductor field effect transistors (MOSFETs). Here, we theoretically propose that the unique Dirac point and the strong density of state peak of monolayer Ag 2 S can sufficiently suppress the thermal tail of injected electrons for a steep-slope MOSFET. The 12 nm-gate-length n-type Ag 2 S MOSFET brings the SS down to 30 mV dec –1 with a high on-state current of 2258 μA μm –1, fulfilling the International Roadmap for Devices and Systems requirements for 2028 both in high-performance and low-power applications. Additionally, the sub-10 nm n-type Ag 2 S MOSFETs are also evaluated by the International Technology Roadmap for Semiconductors for high-performance devices and satisfy the requests until the gate length scales down to 5 nm. Our results suggest that monolayer Ag 2 S is a promising channel alternative for steep-slope transistors in next-generation electronics.