Low EOT and oxide traps for p-substrate Ge MOS device with hafnium nitride interfacial layer
Dun‐Bao Ruan, Kuei‐Shu Chang‐Liao, Wen-Yen Hsu, Shih-Han Yi, Yao‐Jen Lee
Topics & Concepts
Materials scienceEquivalent oxide thicknessGermaniumNitrideHafniumOptoelectronicsSubstrate (aquarium)OxideLeakage (economics)Layer (electronics)SiliconGate oxideTransistorComposite materialElectrical engineeringMetallurgyZirconiumVoltageGeologyEconomicsOceanographyEngineeringMacroeconomicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and interfaces