Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring
Rizwan Ur Rehman Sagar, Min Zhang, Xiaohao Wang, Babar Shabbir, Florian J. Stadler
Abstract
Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.
Topics & Concepts
MagnetoresistanceGrapheneMaterials scienceMonolayerGraphene foamExfoliated graphite nano-plateletsMagnetic fieldMicrostructureNanotechnologyComposite materialGraphene oxide paperQuantum mechanicsPhysicsGraphene research and applicationsAdvancements in Battery Materials2D Materials and Applications