NbTe<sub>4</sub> Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide
Yi Shuang, Qian Chen, Mi Hyeon Kim, Yinli Wang, Yuta Saito, Shogo Hatayama, Paul Fons, Daisuke Ando, Momoji Kubo, Yuji Sutou
Abstract
Abstract 2D van der Waals (vdW) transition metal di‐chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large‐area 2D vdW TMD fabrication, but the high melting point (typically T m > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low‐ T m 2D vdW TM tetra‐chalcogenides and identifies NbTe 4 as a promising candidate with an ultra‐low T m of around 447 °C (onset temperature). As‐grown NbTe 4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low T m and a high crystallization temperature T c can resolve important issues facing current phase‐change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe 4 holds great promise as a potential solution to these issues.