Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers
Yuanhui Zheng, Xiaolei Ma, Faguang Yan, Hailong Lin, Wenkai Zhu, Ji Yang, Runsheng Wang, Kaiyou Wang
Abstract
Abstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development of van der Waals (vdW) heterostructures has created a fascinating platform for exploring spintronic properties in the two-dimensional (2D) limit. Transition-metal dichalcogenides such as tungsten diselenide (WSe 2 ) have electronic band structures that are ideal for hosting many exotic spin–orbit phenomena. Here, we report the spin-filtering effect in all-vdW heterostructures with WSe 2 barrier. Combining 2D-perpendicular magnetic anisotropy Fe 3 GeTe 2 (FGT) with different thicknesses of WSe 2 , the FGT/WSe 2 /FGT spin valve shows distinct charge and spin transport behavior. Moreover, the negative magnetoresistance (−4.3%) could be inverted into positive magnetoresistance (up to +25.8%) with decreasing the WSe 2 thickness. Furthermore, we proposed a spin-filtering model based on Δ-symmetry electrons tunneling to explain the crossover from negative to positive MR signal through ab initio calculation. These experimental and theoretical results illustrate the rich potential of the families of TMDC materials to control spin currents in 2D spintronic devices.