Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
Zhao Liu, Ahmed Abouelkomsan, Emil J. Bergholtz
Abstract
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number C=1 and C=2 bands, occur at high temperatures and without the need for an external magnetic field.
Topics & Concepts
Bilayer grapheneCondensed matter physicsTwistRealization (probability)PhysicsBilayerSpin (aerodynamics)Magnetic fieldChern classGrapheneSinglet stateQuantum mechanicsMembraneGeneticsExcited stateMathematicsStatisticsGeometryBiologyThermodynamicsQuantum and electron transport phenomenaTopological Materials and PhenomenaGraphene research and applications