A Robust and Low‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments
Yanxin Liu, Cong Ye, Kuan‐Chang Chang, Lei Li, Bei Jiang, Xia Chen, Lei Liu, Xin Zhang, Xinyi Liu, T.X. Xia, Zehui Peng, Guangsen Cao, Gong Cheng, Shanwu Ke, Jiahong Wang
Abstract
Abstract Memristor, processing data storage and logic operation all‐in‐one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO 2 ) memristor with ITO/Bi:SnO 2 /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO 2 device, it is found that the bismuth atoms surround the surface of SnO 2 crystals to form the coaxial Bi conductive filament. The self‐compliance current, switching voltage and operating current of Bi:SnO 2 memristor are remarkably smaller than that of ITO/SnO 2 /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO 2 /TiN memory cell of 0.4 × 0.4 µm 2 , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO 2 memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.