Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe
Xu Yang, Xiaomei Li, Yang Li, Yan Li, Rui Sun, Jianan Liu, Xuedong Bai, Na Li, Zong-Kai Xie, Lei Su, Zizhao Gong, Xiang-Qun Zhang, Wei He, Zhao‐Hua Cheng
Abstract
Ferroelectric Rashba semiconductors (FERSCs) have recently attracted intensive attention due to their giant bulk Rashba parameter, αR, which results in a locking between the spin degrees of freedom and the switchable electric polarization. However, the integration of FERSCs into microelectronic devices has provoked questions concerning whether the Rashba effect can persist when the material thickness is reduced to several nanometers. Here we find that αR can keep a large value of 2.12 eV Å in the 5.0 nm thick GeTe film. The behavior of αR with thickness can be expressed by the scaling law and provides a 3D thickness limit of the bulk Rashba effect, dc = 2.1 ± 0.5 nm. Finally, we find that the thickness can modify the Berry curvature as well, which influences the polarization and consequently alters the αR. Our results give insight into understanding the factors influencing αR in FERSCs and pave a novel route for designing Rashba-type quantum materials.