Low‐frequency ferroelectric switching studies in <scp>PVDF</scp> thin films across Cu or (Ag/Cu)/<scp>PVDF</scp>/Cu capacitor structures
Raghavendar Chikkonda, Arun Ravindran, Sumeer Saikia, Akhil Raman Thankamani Sathyanathan, J. Arout Chelvane, S. Angappane, James Raju Kanakkappillavila Chinnayya, R. B. Gangineni
Abstract
Abstract Ferroelectric switching dynamics of polyvinylidene fluoride (PVDF) thin films in Cu or (Ag/Cu)/PVDF/Cu capacitors are explored by varying PVDF film thickness, applied electric field amplitude (4.35–87.5 MV/m) and frequency (100 mHz–200 Hz). Comprehending spontaneous polarization and its dependence upon interfaces, an electric field is critical for organic ferroelectric memory devices. In this article, quasi‐static current–voltage, and polarization–electric field measurements are used to explain the relationship between the coercive field, signal amplitude, and frequency. The observed coercivity enhancement at lower PVDF film thicknesses and with rising frequencies of the applied signal is discussed with Kolmogorov‐Avrami‐Ishibashi domain nucleation and growth model. The relation between domain growth and the top electrode layer is further discussed from the exponent parameters.