Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium
Michael Clavel, F. Murphy‐Armando, Yizhu Xie, K. Henry, Markus Kühn, Robert J. Bodnar, Giti A. Khodaparast, Dmitry Smirnov, J. J. Heremans, Mantu K. Hudait
Abstract
For applications such as low-power tunneling transistors and memory, lasers, qubits, and spintronics, there is interest in using strain to enhance carrier mobility in semiconductors. This experimental and theoretical study investigates transport in highly strained germanium, in which multivalley electron conduction emerges. Surprisingly, all conduction occurs via the L valley in Ge for biaxial tensile strain below 1.6%, while above the contribution from the \ensuremath{\Gamma} valley increases, with negligible contributions from the underlying strain template.
Topics & Concepts
GermaniumCondensed matter physicsMaterials scienceQuantum tunnellingThermal conductionSemiconductorSpintronicsElectronStrain (injury)Tensile strainCrossoverUltimate tensile strengthTransistorOptoelectronicsPhysicsFerromagnetismSiliconComposite materialQuantum mechanicsComputer scienceMedicineVoltageArtificial intelligenceInternal medicineAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications