IR-Drop Analysis of Hybrid Bonded 3D-ICs with Backside Power Delivery and μ- & n- TSVs
Giuliano Sisto, Bilal Chehab, B. Genneret, Rogier Baert, Rongmei Chen, Pieter Weckx, Julien Ryckaert, Ruan Chou, Geert Van der Plas, Eric Beyne, Dragomir Milojevic
Abstract
We present an IR-drop analysis of hybrid bonded 3D-ICs Power Delivery Network with backside metals and buried power rail. Two different options for the backside to frontside connectivity are included: μTSVs and nTSVs (respectively 0.5μm, 0.09μm diameter and 1Ω, 10Ω nominal resistance). Further, Hybrid Bonding CuPads are used to deliver power to the second die in the stack. A commercial power analysis tool is extended to support both the TSV and the pads structures, to tackle both inter-die and on-die power delivery challenges. A L1 cache memory implemented on the top of a core is used as test case to assess the performance of the proposed metal stack. A 69% reduction in average static IR-drop is observed with the BS-PDN compared to the conventional frontside. Further, 81% and 77% average and peak IR-drop reductions are obtained with nTSV compared to μTSV.