Uncooled near- to long-wave-infrared polarization-sensitive photodetectors based on MoSe2/PdSe2 van der Waals heterostructures
Mingxiu Liu, Liujian Qi, Yuting Zou, Nan Zhang, Feng Zhang, Huaiyu Xiang, Zhilin Liu, Mingyan Qin, Xiaojuan Sun, Yuquan Zheng, Chao Lin, Dabing Li, Shaojuan Li
Abstract
Infrared polarization-sensitive photodetectors have attracted considerable interest for night vision, remote sensing and imaging applications. Traditional bulk infrared photodetectors suffer from integration challenges and high-power consumption induced by the cryogenic cooling requirement. Here, we demonstrate a tunneling-dominant triple-junction broadband polarization-sensitive photodetector based on a van der Waals heterostructure, operating from the near-infrared (NIR) to the long-wave infrared (LWIR) band. The device exhibits low noise current, low power consumption and high detectivity. Benefiting from the photogating-assisted tunneling, it reaches a responsivity of ~ 8 × 104 A/W and a response speed of 590 ns under NIR illumination. Apparent blackbody response and high photoresponse up to 10.6 μm is achieved with a room temperature responsivity and detectivity of 0.47 A/W and over 109 Jones. Remarkably, bias-tunable polarization detection capability and high polarization ratios are observed from NIR to LWIR, which further boost target detection and imaging capabilities. Our results offer a promising approach for multidimensional imaging applications and device miniaturization. Conventional bulk infrared detectors usually operate at cryogenic temperatures, leading to high power consumption. Here, the authors report high-performance polarization-sensitive photodetectors based on MoSe2/PdSe2 heterostructures, operating from the near- to the long-wave infrared band at room temperature.