Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹

Abstract

Abstract We demonstrate high-performance normally-off multi-fin β -Ga 2 O 3 vertical transistors with a wide fin width from 1.0 to 2.0 μ m by using a nitrogen-doped β -Ga 2 O 3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of ≥1.3 V, a specific on-resistance of 2.9 mΩ·cm 2 and a current density of 760 A cm −2 at a gate voltage of +10 V. The estimated MOS channel field effect mobility was ∼100 cm 2 V −1 s −1 . These findings offer important insights on the development of Ga 2 O 3 MOSFETs and show the great promise of Ga 2 O 3 vertical power devices.

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