Thermally Stable Broadband Cr<sup>3+</sup>-Doped RbAl<sub>3</sub>P<sub>6</sub>O<sub>20</sub> Phosphor for Near-Infrared Spectroscopy Applications
Xiaozhong Wu, Decai Huang, Qiuming Lin, Lei Han, Weixiong You, Jing Zhu, Xinyu Ye
Abstract
The research on near-infrared (NIR) phosphors has become a trending topic, as their optical properties directly impact the performance of the NIR phosphor-converted light-emitting diode (pc-LED). NIR pc-LED has emerged as a multifunctional light source across various fields due to its unique advantages of high penetration and invisibility. Herein, a peculiar broadband NIR-emitting phosphor is presented, RbAl 3 P 6 O 20: Cr 3+ (RAPO: Cr 3+ ), with an NIR emission range from 650 to 1000 nm and peaking at ∼785 nm with a full-width at half-maximum (fwhm) of ∼1900 cm –1 . Gaussian fitting analysis reveals that broadband emission originates from Cr 3+, occupying two different octahedral sites in the host. The optimized phosphor RAPO: 0.08Cr 3+ exhibits an internal quantum efficiency of 60% and excellent thermal stability (90% at 423 K). The application of pc-LED devices was evaluated by assembling a RAPO: 0.08Cr 3+ phosphor with an InGaN-based LED (450 nm), achieving a remarkable NIR output power of 27.9 mW at 120 mA. The results demonstrate that RAPO: Cr 3+ is an optimistic phosphor for NIR photoelectron (pc-LED) light sources.