Litcius/Paper detail

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Y. H. Fan, Zongwei Xu, Ying Song, Tianze Sun

2021Diamond and Related Materials19 citationsDOI

Topics & Concepts

Vacancy defectSiliconAnnealing (glass)Ion implantationMaterials scienceMolecular dynamicsHydrogenChemical physicsSilicon carbideIonCrystallographic defectDopingMolecular physicsCrystallographyOptoelectronicsComputational chemistryChemistryMetallurgyOrganic chemistrySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesThin-Film Transistor Technologies