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Investigation of parameters of new MAPD-3NM silicon photomultipliers

F. Ahmadov, G. Ahmadov, R. Akbarov, Aliekber Aktağ, Erhan Budak, Emre Doğanci, Umutcan Gürer, M. Holík, Ayşegül Kahraman, H. Karaçalı, Sergiy Lyubchyk, Andriy Lyubchyk, Sergiy Lyubchyk, A. Mammadli, F. Mamedov, S. Nuruyev, P. Přidal, A. Sadigov, Z. Sadygov, O. Urban, Ercan Yılmaz, Ozan Yılmaz, Jan Zich

2022Journal of Instrumentation25 citationsDOIOpen Access PDF

Abstract

Abstract In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.

Topics & Concepts

PhotodiodeScintillatorScintillationSilicon photomultiplierPhysicsOptoelectronicsDetectorOpticsRadiation Detection and Scintillator TechnologiesMedical Imaging Techniques and ApplicationsNuclear Physics and Applications
Investigation of parameters of new MAPD-3NM silicon photomultipliers | Litcius