NO<sub>2</sub> Gas Sensor Based on Pristine Black Silicon Formed by Reactive Ion Etching
Gagik Ayvazyan, Karen Ayvazyan, Levon Hakhoyan, А. В. Семченко
Abstract
Nitrogen dioxide (NO 2 ) is a serious environmental pollutant and can cause negative consequences on both human health and vegetation growth. Herein, the possibility and promise of using a resistive sensor based on pristine black silicon (BSi) to detect NO 2 at room temperature are investigated. BSi is prepared using plasma‐based reactive ion etching. Scanning electron microscope (SEM) studies show that BSi consists of vertically standing nanoneedles and has a large surface area, which facilitates gas adsorption. The gas‐sensing properties of the BSi‐based sensor are tested for low NO 2 concentrations (1–5 ppm). It is found that the prepared sensor samples without posttreatments of BSi exhibit high sensitivity, fast transient response, and good repeatability. In particular, the response and recovery time of the sensor are ≈35 and ≈25 s for 4 ppm NO 2 gas exposure, respectively. Besides, the results indicate that the BSi‐based sensor has excellent selectivity. Finally, the sensing mechanism is discussed, the dominating factors of which are the large active sensing area and the vertical arrangement of the BSi nanoneedles. It is believed that with further optimization, BSi has good potential as a functional material for gas sensors.