Pressure-driven Lifshitz transition in type-II Dirac semimetal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>NiTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
Mengyao Qi, Chao An, Yonghui Zhou, Hao Wu, Bowen Zhang, Chunhua Chen, Yifang Yuan, Shuyang Wang, Ying Zhou, Xuliang Chen, Ranran Zhang, Zhaorong Yang
Abstract
Band engineering in layered transition metal dichalcogenides (TMDs) leads to a variety of emergent phenomena and has obtained considerable attention recently. Transition metal ditelluride ${\mathrm{NiTe}}_{2}$ has been discovered experimentally to be a type-II Dirac semimetal at ambient pressure, and was predicted to display superconductivity in the monolayer limit. Here we systematically investigate the structural and electronic properties of type-II Dirac semimetal ${\mathrm{NiTe}}_{2}$ under high pressure. Room-temperature synchrotron x-ray diffraction and Raman scattering measurements reveal the stability of the pristine hexagonal phase up to 52.2 GPa, whereas both the pressure coefficient and linewidth of Raman mode ${E}_{g}$ exhibit anomalies at a critical pressure ${P}_{\mathrm{c}}\ensuremath{\sim}16\phantom{\rule{0.28em}{0ex}}\mathrm{GPa}$. Meantime, Hall resistivity measurement indicates that the hole-dominated behavior maintains up to 15.6 GPa and transforms into electron-dominated behavior at higher pressures. Our findings consistently demonstrate a pressure-induced Lifshitz transition in type-II Dirac semimetal ${\mathrm{NiTe}}_{2}$.