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Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor

M. Saravanan, P. Eswaran

2023Journal of Electronic Materials12 citationsDOI

Topics & Concepts

TransconductanceOptoelectronicsMaterials scienceField-effect transistorCutoff frequencyTransistorIndium arsenideGallium arsenideContact resistanceLayer (electronics)Radio frequencyIndium antimonideElectrical engineeringNanotechnologyVoltageEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis
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