Pressure‐Tailored Band Engineering for Significant Enhancements in the Photoelectric Performance of CsI<sub>3</sub> in the Optical Communication Waveband
Zonglun Li, Quanjun Li, Haiyan Li, Lei Yue, Dianlong Zhao, Fuyu Tian, Qingfeng Dong, Xueting Zhang, Xilian Jin, Lijun Zhang, Ran Liu, Bingbing Liu
Abstract
Abstract The bandgap and type of optical transition are key factors in determining the functionalities and applications of photoelectric materials. However, it is extremely difficult to modulate the bandgap and indirect‐direct bandgap transition for most materials. This study reports significant enhancements in photocurrents and an extended detection bandwidth resulting from pressure‐regulated indirect–direct bandgap transition in hypervalent CsI 3 . Furthermore, this study achieves an increase in the photocurrent by almost five orders of magnitude under visible‐light illumination. Impressively, the detection band‐edge shows a successive redshift from visible light to 1650 nm (optical communication waveband) upon compression. And high pressure is conducive to CsI 3 operating at an ultralow bias input. Extensive high‐pressure spectroscopy analyses and theoretical calculations suggest that changes in the photoelectric properties of CsI 3 are associated with enhanced I–I interactions along the quasi‐endless linear chain directions under compression. These findings offer an effective band engineering strategy for achieving broadband spectral response and high gains with an ultralow bias in photoelectric detectors.