High- <i>k</i> erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor
Guandong Wang, Daiming Liu, Shuangqing Fan, Zhaoyang Li, Jie Su
Abstract
Abstract In this work, high-dielectric-constant (high- k ) erbium oxide（Er 2 O 3 ）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er 2 O 3 nanofilm is investigated. To demonstrate the applicability of the Er 2 O 3 film, the indium oxide (In 2 O 3 ) thin film transistor (TFT)-based amorphous Er 2 O 3 dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er 2 O 3 nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.