Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe
Meng Yang, Yuting Qian, Dayu Yan, Yong Li, Youting Song, Zhijun Wang, Changjiang Yi, Hai L. Feng, Hongming Weng, Youguo Shi
Abstract
We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: $P4/nmm$, no. 129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at \ensuremath{\sim}4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic $c$ axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.