An efficiently enhanced UV-visible light photodetector with a Zn:NiO/p-Si isotype heterojunction
Yong Zhang, Yongfang Zhang, Tao Ji, Rujia Zou, Enna Ha, Xin Hu, Zhe Cui, Chaoting Xu, Shuang He, Kaibing Xu, Yihong Zhang, Yihong Zhang, Junqing Hu
Abstract
A high-performance broadband photodetector based on a Zn:NiO/p-Si isotype heterojunction formed using a sol–gel process demonstrates an EQE as high as ∼184% at a reverse bias of −4 V.
Topics & Concepts
PhotodetectorHeterojunctionMaterials scienceNon-blocking I/OIsotypeBroadbandOptoelectronicsVisible spectrumOpticsBiologyPhysicsBiochemistryCatalysisImmunologyAntibodyMonoclonal antibodyZnO doping and propertiesGa2O3 and related materialsTransition Metal Oxide Nanomaterials