Numerical Analysis of SnO2/Zn2SnO4/n-CdS/p-CdTe Solar Cell Using the SCAPS-1D Simulation Software
Raad A. Rassol, Rasha F. Hasan, Sameer M. Ahmed
Abstract
This research includes the use of CdTe in the design of a solar cell. The SCAPS-1D computer program was used to simulate thin cell capacity of CdTe/CdS by numerical analysis with the addition of a buffer layer (Zn2SnO4) to enhance cell efficiency. The thickness of the window layer (n-CdS) was reduced to 25nm with the inclusion of an insulating layer of 50 nm thickness to prevent leakage towards the forward bias with respect to the lower charge carriers. As for the absorber layer thickness (p-CdTe), it varied between 0.5µm and 6µm. The preferable thickness in the absorbent layer was 1.5µm. Different operating temperatures (298K-388K) were used, while the highest conversion efficiency (η=18.43%) was obtained with the rest of the solar cell parameters (Voc=0.967 V, Jsc= 26.66 mA/cm2, FF=71.40%).